Produkt mají v nabídce:
Charge-Based MOS Transistor Modeling - Enz, Christian C. (Swiss Centre for Electronics, Switzerland) a Vittoz, Eric A. (Swiss Centre for Electronics, Switzerland)
As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies.
