Produkt mají v nabídce:
Poly-SiGe for MEMS-above-CMOS Sensors - Gonzalez Ruiz, Pilar a De Meyer, Kristin a Witvrouw, Ann
Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ?m Cu-backend CMOS.
